, li ne, 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 ultra fast recovery rectifier diodes glass-passivated, high-efficiency epitaxial rectifier diodes in do-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic. they are intended for use in switched-mode power supplies and high-frequency circuits in general, where low conduction and switching losses are essential. the series consists of normal polarity (cathode to stud) types. quick reference data repetitive peak reverse voltage average forward forward voltage reverse recovery current time BYV30-300 4 vrrm max- 30 4 ip(av) ma*- vp < 1 trr < 00 500 00 500 v 14 a 05 v 50 ns mechanical data fig.1 do-4 with metric (m5) stud as standard. 10-32 unf is available upon request with suffix u (e.g. byv30-400u). dimensions in mm net mass: 6 g diameter of clearance hole: max. 5.2 mm accessories supplied on request: see data sheets mounting instructions and accessories for do-4 envelopes. supplied with device: 1 nut, 1 lock washer. nut dimensions across the flats: 9.5 mm torque on nut: min. 0.9 nm (9 kg cm) max. 1,7 nm (17 kg cm) nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
ratings limiting values in accordance with the absolute maximum system (iec 134). voltages non-repetitive peak reverse voltage repetitive peak reverse voltage crest working reverse voltage continuous reverse voltage* currents average forward current; switching losses negligible up to 100 khz square wave; 6 = 0.5; up to tmb = 113 c uptotmb=125c sinusoidal; up to tmb = 118 c uptotmb-125c r.m.s. forward current repetitive peak forward current tp = 20 /^s; 6 - 0.02 non-repetitive peak forward current half sine-wave; tj = 150 c prior to surge; with reapplied vrwmmax; t = 10ms t = 8.3 ms i2t for fusing (t = 10ms) temperatures storage temperature junction temperature thermal resistance from junction to mounting base from mounting base to heatsink with heatsink compound from junction to ambient in free air characteristics forward voltage if = 15a;tj = 150c = 50a;t reverse current vr = vrwmmax;tj t| = 25 c reverse recovery when switched from if = 1 a to vr 5> 30 v with -dlp/dt = 100 a/ps tj =? 25 c; recovery time if = 2 a to vr > 30 v with -dlf/dt = 20 a/ps; tj = 25 c; recovered charge if = 10 a to vr>30 vwith-dlf/dt = 50 tj = 100 c; peak recovery current forward recovery when switched to if * 10 a with dlp/dt = 10 a/jjs; tj = 25 c BYV30-300 4c vrsm max- 35 4e vrrm max. 300 4c vrwm max. 20 3c vr max. 200 3c if(av) max. lf(av) max. 'f(av) max. ip(av) ma*- if(rms) max. ifrm max. ifsm max. ifsm max. ljt max. 0 500 v 0 550 v 0 500 v 0 400 v 0 400 v 14 a 10 a 12.5 a 10 a 20 a 320 a 150 a 180 a 112 a2s tstg -65 to +175 c tj max. rth j-mb rth mb-h rth j-a vf < vf < ir < ir < 150 c 2.0 k/w 0.3 k/w 50 k/w 1.05 v* 1.40 v* 0.8 ma 50 fia |
